Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1401-1403
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of light illumination on the photovoltaic performances of hydrogenated amorphous silicon (a-Si:H) n+-p-p+ solar cells has been investigated. The degradation increases as the doping concentration of p-type a-Si:H increases, and it decreases with increasing the substrate (or annealing) temperature. These results indicate that the light-induced degradation increases with the microvoid density in the material. The increase of conversion efficiency has been observed for a-Si:H n+-p-p+ cells after light exposure, and this is due to the increase of doping efficiency for p-type a-Si:H during light illumination.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99128
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