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Hydrogen neutralization of chalcogen double donors in silicon (1987)

Pensl, G. ; Roos, G. ; Holm, C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 451-453

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Hydrogen neutralization of chalcogen (S, Se, and Te) double-donor centers in single-crystal silicon is demonstrated with deep level transient spectroscopy. The deep-donor chalcogen concentration can be reduced by greater than a factor of 100, while in the same samples the phosphorus shallow-donor concentration decreases by only a small percentage. Both electronic levels of the double donors were fully removed by hydrogenation and recovered with an anneal at 500 °C.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.98419

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