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Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor (1987)

Woodward, T. K. ; McGill, T. C. ; Chung, H. F. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 1542-1544

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report experimental realization of a three-terminal negative differential resistance (NDR) device. The device consists of a GaAs-AlxGa1−xAs double-barrier tunneling heterostructure in series with a recessed-gate metal-semiconductor field-effect transistor on a semi-insulating substrate. Basic dc characteristics for three samples grown by metalorganic chemical vapor deposition are shown. All samples exhibit NDR at 77 K, with peak-to-valley current ratios between 2 and 7. Current densities at the peak of the NDR range from 0.5 to 380 A/cm2. The peak-to-valley current ratio and the voltage location of the NDR can be modulated with gate bias.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.98629

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