Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
89 (2001), S. 7018-7020
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dynamic hysteresis scaling behavior in epitaxial Fe/GaAs(001) and Fe/InAs(001) thin films (thickness range 7.3–150 Å) has been investigated as a function of Fe film thickness in the field sweep rate range 0.005–1000 kOe/s using the magneto-optic Kerr effect. The hysteresis loop area A follows the scaling relation A∝(dH/dt)α. We find two distinct dynamic regimes: the low dynamic regime in the sweep rate range 0.005–250 kOe/s, and the high dynamic regime beyond 250 kOe/s. There is a marked increase in α between the low and high dynamic regimes which we attribute to the dominant reversal mechanism changing from domain wall motion to nucleation. In the low dynamic regime α is a decreasing function of Fe film thickness, and this behavior is attributed to the effect of interface-induced pinning. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1357840
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