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  • 1
    Electronic Resource
    Electronic Resource
    A study of interlayer coupling in Co/Cu multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3971-3974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co(22 A(ring))/Cu multilayers with Cu thicknesses varying from 6 to 40 A(ring) are studied by vibrating-sample magnetometry and ferromagnetic-resonance spectroscopy (FMR). The magnetization was found to increase with decreasing Cu thickness, whereas the linewidth of the uniform mode of the FMR was found to decrease. This is attributed to the spin polarization of the Cu layers due to interlayer coupling and its effect on the lowered dimensionality of the Co layers. We also observed a peak on the high-field side of the uniform FMR mode, which we attribute to antiparallel coupling of adjacent ferromagnetic layers producing an "optical'' mode. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359561
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  • 2
    Electronic Resource
    Electronic Resource
    Interlayer coupling and spin polarization of the nonmagnetic layers in Fe/Cu and Fe/Ag CMFs : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6190-6192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositionally modulated films (CMFs) of Fe/Cu and Fe/Ag, made by RF sputtering, were investigated with ferromagnetic resonance (FMR), nuclear magnetic resonance (NMR), and magneto-optical (MO) spectroscopy. Evidence of spin polarization of the nonmagnetic layers, related to the interlayer coupling, was obtained. Direct evidence of the penetration of an exchange field and the spin polarization of the conduction electrons in the nonmagnetic Cu layers was obtained in Fe/Cu CMFs by NMR. Spin-wave resonances were observed in Fe/Cu CMFs in FMR experiments, and the spin wave was found to be sustained by both the Fe and Cu sublayers. The MO spectra of Fe/Ag CMFs indicated that the conduction electrons of Ag are spin polarized and give an additional MO activity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355452
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  • 3
    Electronic Resource
    Electronic Resource
    The spin-dependent electronic structure of amorphous magnetic alloys : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4419-4421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-resolved photoemission from FeB and CoB binary amorphous alloys has been measured using, for the first time, a synchrotron radiation source. A comparison of the experimental results with several ab initio calculations on two model systems Fe80B20 and Co77B23 shows that the spin-resolved photoemission provided a critical test of theoretical models, and gives insight into the spin-dependent electronic structures of these materials.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364787
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  • 4
    Electronic Resource
    Electronic Resource
    Complex magneto-optical Kerr rotation of Fe,FeCo/Cu multilayer films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3470-3474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex magneto-optical Kerr rotation spectra of Fe/Cu and FeCo/Cu bilayers and compositionally modulated films (CMF) were studied experimentally and theoretically. In the bilayers, an enhancement of Kerr ellipticity εk by a factor of 5 was observed at long wavelength side, while the Kerr rotation θk can only be enhanced by a factor of 2 around the plasma edge of Cu. In the CMFs, εk was enhanced by 60% but no θk enhancement was observed. Theoretical analyses showed that both the magnitude of effective ε˜xye and the magnitude and signs of effective Ae and Be are important for magneto-optical enhancement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354523
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation distribution near the crack tip of I and II modes in bulk aluminum single crystal (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 203-206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocation distribution near the crack tip of I and II modes in bulk aluminum single crystal has been decorated by using the etching pit technique and then was observed by scanning electron microscopy. It has been shown that two kinds of distribution of dislocations, i.e., shielding and antishielding dislocations are found to exist near the crack tip. In addition to these, the dislocation-free zone is still observed to be between the crack tip and the plastic zone. According to Rice and Thomson [Philos. Mag. 29, 73 (1974)], the dislocation mode of the elastic-plastic crack is extended to include the antishielding dislocations as part of a crack-tip equilibrium configuration, which may be described as follows: (μb/2π) (∫−e−a+∫−c−s +∫sc+∫ae)[ f(x')/(x−x')]dx'+σa=0, when ||x||〈C, or σf, when c〈||x||〈s and e〈||x||〈a. The factors affecting the dislocation distribution are discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347751
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  • 6
    Electronic Resource
    Electronic Resource
    The magneto-optical Kerr effect of bilayers Fe/Au-Cu and Fe/Ag-Au (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1373-1375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bilayers Fe/Au-Cu and Fe/Ag-Au made by vacuum evaporation were studied. The magneto-optical polar Kerr rotation and reflectivity spectra were measured in the region from 400 to 700 nm. In the magneto-optical Kerr rotation spectra of bilayers Fe/Au-Cu and Fe/Ag-Au with the thickness of Fe layer less than the light penetration depth, there is a broad enhancement of the magneto-optical polar Kerr rotation with a Kerr peak near the plasma edge in the reflectivity spectra of Au-Cu and Ag-Au alloys. The peak shifts toward the long wavelength side with increasing Cu and Au content in Au-Cu and Ag-Au alloys, respectively. Our results show that the composition of the reflector in our bilayer structures can shift the wavelength range of the magneto-optical Kerr rotation enhancement. Interpretation and discussions are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351256
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  • 7
    Electronic Resource
    Electronic Resource
    Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures (invited) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6740-6744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two major problems in spin electronics remain to be solved: room temperature spin injection at a source and spin detection at a drain electrode. The lateral size of magnetic contacts and the presence of a potential barrier at the interface are believed to have a key influence on the efficiency of both of these processes. We therefore aimed to clarify these issues by studying spin-polarized transport across epitaxially grown single crystal Fe (001)/GaAs nanoclusters and at the Schottky barrier formed at Ni80Fe20/GaAs interfaces. We observed a negative contribution to the magnetoresistance of an ultrathin (2.5 ML) discontinuous epitaxial Fe film as occurs in tunnel magnetoresistance. This result suggests that spin transport via GaAs is possible on the nanoscale. In the continuous NiFe/GaAs structures, circularly polarized light was used to create a population of spin-polarized electrons in the GaAs substrate and spin-polarized electron transport across the interface at room temperature was detected as an electrical response associated with the field-dependent photocurrent. Surprisingly, highly efficient spin transmission is observed at room temperature, indicating that there is no significant loss of spin polarization for electrons crossing the interface. This result unambiguously demonstrates that spin detection is possible at room temperature in a continuous ferromagnet/semiconductor contact in the presence of the Schottky barrier. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361045
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  • 8
    Electronic Resource
    Electronic Resource
    Domain wall trapping in controlled submicron ferromagnetic elements (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4727-4729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain configuration in permalloy wires (30 nm thick, 10 μm wide, and 205 μm long) with a wide size range of a narrow central bridge (5 μm long and w μm wide; 0.5≤w≤10 μm) were investigated in both their demagnetized and remanent states using magnetic force microscopy and the results were confirmed by micromagnetic calculations. At the bridge region, domain walls were found to be shifted by a small external field. Scanning magneto-optical Kerr effect revealed that the coercivity in these structures are the same as that in a straight wire, suggesting that domain wall movement is the dominant process in the magnetization reversal of these structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373140
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  • 9
    Electronic Resource
    Electronic Resource
    Sweep rate-dependent magnetization reversal in epitaxial Fe/GaAs(001) and Fe/InAs(001) thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5926-5928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the magnetization reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01–160 kOe/s using magneto-optic Kerr effect. For 55 and 250 Å Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation A∝H(overdot)α with α=0.03–0.05 at low sweep rates and 0.33–0.40 at high sweep rates. For the 150 Å Fe/InAs(001) film, α is found to be ∼0.02 at low sweep rates and ∼0.17 at high sweep rates. The differing values of α are attributed to a change of the magnetization reversal process with increasing sweep rate. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372569
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  • 10
    Electronic Resource
    Electronic Resource
    Uniaxial magnetic anisotropy of epitaxial Fe films on InAs(100)-4×2 and GaAs(100)-4×2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6110-6112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the uniaxial magnetic anisotropy of ultrathin epitaxial Fe films grown on InAs(100)-4×2 and GaAs(100)-4×2 has been studied in situ by means of the magneto-optical Kerr effect. In Fe/InAs(100)-4×2, the uniaxial magnetic anisotropy easy axis direction along [011] was found to be rotated 90° compared with that of Fe/GaAs(100)-4×2 along [01¯1]. Real-time reflection high energy electron diffraction measurements of Fe/InAs(100)-4×2 show that the lattice constant of the epitaxial Fe films relaxes remarkedly faster along the [01¯1] direction than along the [011] direction in the same thickness range where the uniaxial magnetic anisotropy occurs. These results suggest that the symmetry-breaking atomic scale structure of the reconstructed semiconductor surface gives rise to the uniaxial magnetic anisotropy in a ferromagnetic metal/semiconductor heterostructure via surface magneto-elastic interactions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372625
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