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Hall mobilities in B-doped strained Si1−xGex and Si1−x−yGexCy layers grown by ultrahigh vacuum chemical vapor deposition (2000)

Kar, G. S. ; Dhar, A. ; Ray, S. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 2039-2042

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Hall mobilities in a temperature range of 80–300 K have been measured in fully strained Si1−xGex and partially strain-compensated p-type Si1−x−yGexCy alloy layers grown on Si (100) by ultrahigh vacuum chemical vapor deposition. The effect of the addition of C on strain compensation of Si1−xGex films has been studied by high-resolution x-ray diffraction analysis. The Hall hole mobility is found to increase with decreasing compensative strain or effective Ge content in the layer throughout the studied temperature range. The effect of a Si-cap layer on the hole mobility of Si1−x−yGexCy film has been investigated. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1305927

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