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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4635-4636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a study of the kinetics of binding of presumed H2 complexes in silicon to monatomic oxygen impurities, Markevich and Suezawa [J. Appl. Phys. 83, 2988 (1998)] were able to infer a diffusion coefficient for the isolated H2 species. We point out here that to within experimental accuracy this diffusion coefficient agrees both in magnitude and in temperature dependence with the diffusion coefficient measured by us in 1991 for a neutral, spinless hydrogen species commonly found in plasma-hydrogenated n-type silicon. The agreement not only supports the validity of both types of measurements, but also encourages the interpretation that the same hydrogen complex (presumably H2 at or near a tetrahedral site) was dominant in both experiments and diffuses by a single mechanism dominant from 305 to 473 K and independent of concentration over a wide range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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