Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 6110-6112
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The evolution of the uniaxial magnetic anisotropy of ultrathin epitaxial Fe films grown on InAs(100)-4×2 and GaAs(100)-4×2 has been studied in situ by means of the magneto-optical Kerr effect. In Fe/InAs(100)-4×2, the uniaxial magnetic anisotropy easy axis direction along [011] was found to be rotated 90° compared with that of Fe/GaAs(100)-4×2 along [01¯1]. Real-time reflection high energy electron diffraction measurements of Fe/InAs(100)-4×2 show that the lattice constant of the epitaxial Fe films relaxes remarkedly faster along the [01¯1] direction than along the [011] direction in the same thickness range where the uniaxial magnetic anisotropy occurs. These results suggest that the symmetry-breaking atomic scale structure of the reconstructed semiconductor surface gives rise to the uniaxial magnetic anisotropy in a ferromagnetic metal/semiconductor heterostructure via surface magneto-elastic interactions. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372625
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