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Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors (1999)

Farmakis, F. V. ; Dimitriadis, C. A. ; Brini, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 6917-6919

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The photon emission induced by the drain avalanche in polycrystalline silicon thin-film transistors (polysilicon TFTs) has been studied in wide drain and gate voltage ranges. As the photon emission phenomenon is closely related to hot-carrier effects, the gate and drain bias conditions for maximum device degradation have been determined from measurements of the emitted light intensity. In n-channel polysilicon TFTs, the effects of bias stressing at the maximum light emission are related to hot-hole trapping into the gate oxide near the drain and to formation of acceptor-like interface states consisted of midgap states and band tails. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370105

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