Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 6920-6922
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1−xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.370106
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