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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis of 1-substituted and 1,3-disubstituted 5-hydantoincarboxylates (1975)
    s.l. : American Chemical Society
    The @journal of organic chemistry 40 (1975), S. 3414-3417 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00911a024
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic and structural properties of permalloy-tantalum multilayer thin films : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4526-4528 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work describes a detailed investigation into the magnetic and structural properties of permalloy-tantalum multilayered thin films produced by vacuum evaporation. Their microstructure was investigated using high-resolution TEM and the magnetic properties were measured with vibrating-sample and vibrating-reed magnetometers. The results show a reduction in coercivity for the multilayer films which is independent of the number of layers but depends strongly on the magnetic layer thickness. The tantalum layer is shown to be continuous and microcrystalline down to 25-A(ring) thickness, but the interface between the layers is irregular and may give rise to additional magnetostatic coupling as the tantalum layer thickness is reduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348348
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  • 3
    Electronic Resource
    Electronic Resource
    The role of dipole coupling in multilayers : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5978-5980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work considers the role of magnetic dipole coupling in multilayers typically comprising a ferromagnetic material separated by a nonmagnetic metal spacer, e.g., NiFe/Ta. It has been suggested previously that dipolar fields may play an important role in the coupling of magnetic layers through a nonmagnetic spacer, in particular where surface roughness at the interface is significant. This work considers a first-order calculation of the dipole coupling energy and magnetic field between two adjacent layers. It is shown that dipole coupling energies originating from surface corrugations can behave in the same manner as a coercive field in terms of dependence on nonmagnetic spacer thickness and the degree of roughness. Interestingly, calculations also show that both ferromagnetic- and antiferromagnetic-like coupling can be explained in terms of this model. The role of the spacer thickness, magnetic layer thickness, and the form of the roughness is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353489
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of deposition process on the magnetic properties of coupled permalloy thin films : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6365-6367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double layer thin films of permalloy (layer thickness 200–1300 A(ring)) with tantalum (50 A(ring)) as a nonmagnetic spacer have been prepared by e-beam evaporation. The effect of deposition parameters, especially the substrate temperature on the magnetic properties of these films has been examined. The coercivity(Hc) of the double layer films was found to be very sensitive to the substrate temperature in the permalloy layer thickness range of 200–600 A(ring). The coercivity of the films deposited at 40 °C is lower than at 300 °C and is almost independent of the Permalloy layer thickness. The XRD patterns and STM images of these two films exhibit large differences in permalloy grain size and grain orientation. However, the Hc of the single layer films deposited under the same conditions as the double layer films shows no significant change in this thickness region. The results indicate that the change of interface condition is primarily responsible for the Hc variation in the coupled films deposited at different substrate temperatures and strongly suggest that interface roughness plays a dominant role in the coupling between the permalloy layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352650
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  • 5
    Electronic Resource
    Electronic Resource
    Enhanced hydrogen desorption from Si sites during low-temperature Si1−xGex growth by disilane and solid-Ge molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6920-6922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1−xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370106
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  • 6
    Electronic Resource
    Electronic Resource
    Selective-area room temperature visible photoluminescence from SiC/Si heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1419-1420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiC/Si heterostructures have been patterned by reactive ion etching with CHF3/O2 to produce SiC-covered and Si-exposed regions with lateral dimensions of 2.5 to ∼500 μm. The patterned samples were then anodized in HF/ethanol solutions. Short anodization times (〈3 min) result in selective-area UV-induced visible photoluminescence (PL), with a peak located at 650 nm, being observed at 25 °C from only the SiC-covered regions. The emission is generated by porous Si (PoSi) selectively formed under the SiC cap and transmitted through the wide band-gap SiC layer. Longer etching times result in nonselective PL.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111902
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  • 7
    Electronic Resource
    Electronic Resource
    Uniform β-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2107-2109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: β-SiC thin films have been grown on Si by rapid thermal chemical deposition at reduced pressures (LP-RTCVD) as low as 5 Torr. The growth process involved the carbonization of the (100)Si surface by reaction with propane. Reducing the pressure resulted in a monotonic increase in growth rate. At a reaction temperature of 1300 °C, using 100 sccm of C3H8 (diluted to 5% in H2) and 0.9 lpm H2 carrier gas yielded a growth rate of 0.45 A(ring)/s at 760 Torr and 18 A(ring)/s at 5 Torr. A substantial increase in film thickness uniformity was observed at low pressure. At 5 Torr, the average thickness and standard deviation measured over the area of a 7.5 cm diam wafer were 1602 and 46 A(ring), respectively. This low standard deviation for LP-RTCVD, equivalent to 2.87% of the average thickness, is the result of uniform growth over the entire specimen, including the edge region. In contrast, atmospheric pressure RTCVD results in severely nonuniform growth in the vicinity of the wafer edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107104
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3347-3349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-pressure chemical vapor deposition of SiC on carbonized Si from the single-source organosilane precursor silacyclobutane (c-C3H6SiH2,SCB) has been investigated from 800 to 1200 °C. On atmospheric pressure-carbonized (100)Si, SiC films grown at 900 °C and above exhibit a transmission electron diffraction pattern consisting only of sharp spots with cubic symmetry. X-ray diffraction (XRD) of these films exhibit primarily the (200) and (400) SiC lines. XRD of films grown at 900 °C on Si(111) exhibits only an extremely large SiC(111) peak with a full width at half-maximum of 450 arcsec. Using a SCB flow rate of 1 sccm, a SiC growth rate of 4–5 μm/h was obtained on Si at 900 °C. Crystalline SiC films have also been grown by SCB at a temperature of 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110140
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  • 9
    Electronic Resource
    Electronic Resource
    Atomic probe imaging of β-SiC thin films grown on (100) Si (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1495-1497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic-scale imaging has been achieved on β-SiC surfaces using scanning tunneling microscopy in air. SiC films were grown on Si (100) substrates by chemical vapor deposition using the carbonization reaction of the surface with C3H8, followed (for films thicker than 100 nm) by the reaction of C3H8 and SiH4. For a relatively thick SiC (∼6 μm) film, the average nearest-neighbor surface atomic spacing measured was 3.09 A(ring), which is very close to the nominal value of 3.08 A(ring). Several of the thinner (〈100 nm) SiC films exhibited significantly larger atomic spacings, indicating the strong effect of the larger atomic spacing (nominally 3.84 A(ring)) of the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107282
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  • 10
    Electronic Resource
    Electronic Resource
    Structural characterization of nanometer SiC films grown on Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3135-3137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous, ultrathin silicon carbide (SiC) films of less than 10 nm have been grown on Si by rapid thermal chemical vapor deposition carbonization with high propane flow rates at 1100–1300 °C. X-ray and electron diffraction techniques indicated a monocrystalline structure for these nanometer-scale films. High-resolution transmission electron microscopy reveals that five SiC planes are aligned with four Si planes at the SiC/Si interface. The Fourier transform infrared spectrum of the SiC films exhibits the characteristic Si-C absorption peak at around 800 cm−1, with a FWHM of 45 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109106
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