Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 3135-3137
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Continuous, ultrathin silicon carbide (SiC) films of less than 10 nm have been grown on Si by rapid thermal chemical vapor deposition carbonization with high propane flow rates at 1100–1300 °C. X-ray and electron diffraction techniques indicated a monocrystalline structure for these nanometer-scale films. High-resolution transmission electron microscopy reveals that five SiC planes are aligned with four Si planes at the SiC/Si interface. The Fourier transform infrared spectrum of the SiC films exhibits the characteristic Si-C absorption peak at around 800 cm−1, with a FWHM of 45 cm−1.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109106
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