Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 5798-5800
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
A series of Fe/Al2O3/Fe tunneling junction samples were prepared by ion beam sputtering technique. After deposited, the Al layers in a series of samples were exposed to the air for 24–100 h to obtain Al2O3 layers (100 Å) with different oxidation quality. A tunneling magnetoresistance (TMR) value of 5.89% was observed in the sample with the Al layer oxidized for 72 h. The I–V curve of this sample shows a nonlinear relationship, indicating the existence of well metal–insulator contact in the sample. The microstructures of these samples were analyzed by using x-ray photoelectron spectroscopy. The results show that good Al2O3 layers are formed in all samples, but there exists an interdiffusion interface between the Fe and Al2O3 (with Al metal inclusions) layer which greatly influences the TMR effect. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.369923
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