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The importance of high-index surfaces for the morphology of GaAs quantum dots (1999)

Platen, J. ; Kley, A. ; Setzer, C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 3597-3601

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Results of a combined experimental and theoretical study are presented. GaAs{113} and {112} surfaces have been prepared by molecular beam epitaxy and analyzed in situ by low-energy electron diffraction and ex situ by atomic-force microscopy. The experimentally found structures are in full agreement with surface energies calculated by density-functional theory. The {112} surfaces are unstable under faceting into low-index planes, whereas the {113} surfaces appear as singular surfaces. Particularly, for GaAs(113) the surface energy is comparable with the values for the low-index surfaces. The impacts of these results on the interface between InAs quantum dots and the embedding GaAs matrix are discussed. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.369720

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