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Diffusion of Au in ZnSe and its dependence on crystal quality (1999)

Slotte, J. ; Salonen, R. ; Ahlgren, T. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 799-802

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Diffusion of gold in zinc selenide has been studied by using a 12C and 4He ion backscattering technique. The samples were thin films grown by molecular beam epitaxy on bulk GaAs (100) substrates and on GaAs (100) epitaxial layers followed by evaporation of gold and annealing in the temperature range 400–800 °C. The surface properties of the samples were studied with scanning electron microscopy and atomic force microscopy. The crystal quality of the samples was studied with 4He ion channeling. The gold diffusion was found to depend significantly on the crystal quality of the ZnSe. An empirical model for calculating the diffusion coefficient for different crystal quality ZnSe is presented. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.369162

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