Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 6659-6666
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The presence of a parasitic surface film of 80 nm thickness has been observed by x-ray reflectivity on the top of some p+ type porous silicon layers, related to a contamination of the substrate. After testing several methods to clean the substrate and to avoid this film, it was found that a 300 °C thermal annealing of the substrate is sufficient to obtain a homogeneous porous layer. The thickness of the perturbed surface layer is determined by anodic oxidation experiments and the effect of the parasitic surface film on the porous silicon formation is studied by comparing porous layers formed on untreated and on annealed substrates. The hypothesis of a passivation of the boron doping atoms by hydrogen is discussed and we review the observations of nonhomogeneous porous layers which could be related to such a contamination problem. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369041
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