Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 8077-8079
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on experimental results with three-terminal superconductor/semiconductor hybrid junctions, which are based on the two-dimensional electron gas at the surface of p-type InAs. A short distance ((approximate)150 nm) between superconducting Nb contacts is obtained using a step geometry. The step geometry allows the realization of different heterostructure potential profiles along the two-dimensional channel. The critical current of the step junctions can be controlled by applying a voltage to highly doped (δ-doped) layers embedded in the heterostructure. With p-δ-doped layers, a p-n junction is introduced in the two-dimensional channel and an asymmetric change of the critical current with respect to the gate voltage or gate current is observed. With n-δ-doped layers, the change is symmetrical. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367905
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