Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 810-812
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on photoluminescence (PL) and photoluminescence-excitation measurements in GaAs/In0.1Ga0.9As/AlAs double-barrier tunneling structures as a function of bias voltage and temperature. We have observed a splitting in the quantum well photoluminescence due to island formation in the quantum well. We have a good correlation between the variation of integrated PL intensity, linewidth, and tunnel current bias for both lines. The temperature dependence of photoluminescence spectra shows that transfer of carrier between islands can be tuned by the applied bias and that states in different islands are populated by electrons in the resonant tunneling process. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365776
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