Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 559-561
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thermally induced reactions at SiO2/Al interfaces are investigated by cross-sectional transmission electron microscopy. For the SiO2/Al interfaces fabricated by chemical vapor deposition of SiO2 on polycrystalline Al films, precipitates of reduced Si as the reaction products are observed in the Al films and along the SiO2/Al interfaces, after annealing at 500 °C for more than 2 h. On the other hand, the interfaces fabricated on the single-Al(111) films show no precipitation even after 4 h of annealing. The differences in the interfacial reactivities are discussed in relation to the existence of grain boundaries and Al film orientations. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360866
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