ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Deep levels in indium selenide single crystals doped with iodine (1995)

Micocci, G. ; Tepore, A. ; Rella, R. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 5427-5430

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Electron trapping levels in indium selenide single crystals doped with iodine have been investigated by deep-level-transient spectroscopy measurements. Two traps located at about 0.60 and 0.21 eV have been detected below the conduction band and the corresponding thermal capture cross sections have been evaluated. The first trap is present both in undoped and doped InSe crystals, whereas the second trap appears in doped samples. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359724

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit