ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigate how the mobility and carrier density of AlGaAs/GaAs two-dimensional electron gas are influenced by the fabrication process with plasma-excited chemical vapor deposition (plasma-CVD) SiN film. These properties are greatly reduced by annealing with plasma-CVD SiN film as a cap but are restored by reannealing after removing the SiN film. We further use capacitance-voltage measurements to investigate the influence of this same process on a more simplified structure, Si-doped GaAs layer. Annealing with a plasma-CVD SiN film changes the defect density of Si-doped GaAs in two, temperature dependent ways: annealing below 380 °C reduces deposition damage, and annealing above 300 °C produces new defects, which might be caused by the film stress. These new defects can be reduced by reannealing after removing the SiN film. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359846
