ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High quality silicon dioxide films have been produced using a direct plasma-enhanced chemical vapour deposition process with silane, nitrous oxide and helium that leaves a nitrided layer at the Si-SiO2 interface. X-ray photoelectron spectroscopy coupled with etch-back of the films has shown that the interface nitrogen is incorporated by nitridation of the silicon surface. Fowler–Nordheim injection measurements on thin films annealed after deposition for 1 minute at 950 °C show that the neutral-trap generation and interface state generation rates are comparable to that of thermal oxide if a proper deposition power is chosen. The data is consistent with an interpretation in which fast donor states, not Pb centres, account for almost all of the increase in the charge trapped at the interface. Too high deposition powers lead to excessive nitrogen and higher interface state generation rates. It is proposed that improved performance under hot-electron stress could be obtained by using an optimal deposition power to obtain an optimal nitrogen concentration followed by annealing in oxygen. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360762
