ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Field-effect transistors based on poly(p-phenylene vinylene) doped by ion implantation (1995)

Pichler, K. ; Jarrett, C. P. ; Friend, R. H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 3523-3527

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have fabricated metal-insulator-semiconductor field-effect transistors (MISFETs), with thin films of polycrystalline poly(p-phenylene vinylene) (PPV) as the semiconducting layer and report here the successful operation of a PPV MISFET based on the p-type doping of the polymer layer by ion implantation of iodine. The measured field-effect mobility of the charge carriers in this ion- implanted PPV is in the range of 10−7 to 10−8 cm2/V s. These values are in the same range as those obtained from a PPV MISFET in which the PPV was doped from the gas phase. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358647

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit