ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs (1994)

Nabetani, Y. ; Ishikawa, T. ; Noda, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 347-351

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular-beam epitaxy. Structure and optical properties are investigated. Reflection high-energy electron-diffraction observation reveals that an InAs layer forms a three-dimensional structure with specific facets after two-dimensional growth. The transmission electron microscope observation shows that these structures have structural anisotropy in the growth plane. Photoluminescense spectroscopy shows that the luminescence from the InAs structures exhibits the polarization property caused by the quantum dot effect of the structural anisotropy.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358483

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit