Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 2545-2554
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a study of the boundary conditions for the potential at exposed semiconductor surfaces in split-gate structures, which views the exposed surface as the interface between the semiconductor and air. A two-dimensional numerical algorithm is presented for the coupling between the nonlinear Poisson equation in the semiconductor (finite element method) and Laplace's equation in the dielectric (boundary element method). The utility of the coupling method is demonstrated by simulating the potential distribution in an n-type AlGaAs/GaAs split-gate quantum wire structure within a semiclassical Thomas–Fermi charge model. We also present a comparison of our technique to more conventional Dirichlet and Neumann boundary conditions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356228
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
