Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 4943-4947
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have used the perturbed angular correlation technique to measure the orientation of the electric-field gradients (EFGs) due to vacancy trapping by substitutional indium donors in the II-VI semiconductor Hg0.79Cd0.2Te. Previously, two hyperfine interaction frequencies were measured and were attributed to the trapping of a metal vacancy at a next nearest-neighbor site to the indium atom in bulk solid-state recrystallized materials. In the present experiments, measurements are done on thin-film samples to find the principal axes of the EFGs. Both EFGs are found to have principal axes parallel to a 〈111〉 crystal axis, despite the fact that a simple point charge model supports a 〈110〉 EFG for this 〈110〉-oriented In-VHg complex. A similar situation exists for indium-vacancy pairing in other II-VI semiconductors. We propose that the 〈111〉 EFG orientation arises from the electric dipole moments of the highly polarized Te ions in the region of the vacancy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354331
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