Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 2810-2812
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Theoretical investigations are presented of the electric-field dependence of normal-incidence interconduction subband absorption in Ga1−xAlxSb/AlSb L-valley quantum wells. Under an applied electric field of 50 kV/cm, a blue shift of the absorption peak from 4.94 to 4.82 μm was found in a Ga0.7Al0.3Sb/AlSb structure with well width of 25 A(ring). The ability to absorb normally incident light and to achieve significant Stark shifts with bias makes the Ga1−xAlxSb/AlSb L-valley system an attractive choice for the 3–5 μm vertical optical modulators.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354630
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