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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1874-1878 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling properties and their temperature variations of molecular bean epitaxy grown symmetric AlAs/GaAs/AlAs resonant tunneling diodes with thin barriers are studied theoretically and experimentally. The measured peak and valley current densities show strong dependences on temperature. A Monte Carlo simulation including impurity and optical-phonon scatterings is developed for the calculation of the current-voltage behavior of the double barrier structures. This approach reveals pronounced temperature dependent tunneling features which agree well with measured results.
    Type of Medium: Electronic Resource
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