Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 2131-2133
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Si delta-doped layers of GaAs were grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). The results showed that, in LP-MOVPE, growth rate plays a crucial role in confinement of dopants and growth temperature has only a secondary effect. Effects of purge time, doping temperature, and doping period on sheet carrier concentration of delta-doped layers were studied. The effect of growth rate on confinement of dopants was discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354740
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