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A kinetic model for As and P incorporation behaviors in GaAsP grown by gas-source molecular beam epitaxy (1993)

Liang, B. W. ; Tu, C. W.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 255-259

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A kinetic model has been developed to explain As and P incorporation behaviors in GaAs1−xPx epilayers grown on GaAs (001) by gas-source molecular beam epitaxy. The model can predict the P compositions for various substrate temperatures and flow rates. The model shows that an in situ determination of GaP molar fraction in GaAs1−xPx can be performed by group V-induced intensity oscillations of reflection high-energy-electron diffraction at low substrate temperatures where desorption of group V species is negligible. At high substrate temperatures the compositions can be determined from the arsine and phosphine flow rates.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354155

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