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Electrical characteristics of layer semiconductor p-GaSe doped with Cd (1993)

Shigetomi, S. ; Ikari, T. ; Nakashima, H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 4686-4688

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.352765

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