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  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature photoacoustic measurements by a transducer technique (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 17-19 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple technique for photoacoustic spectroscopy at low temperature using a rf-sputtered ZnO film transducer is described. We succeed in obtaining the spectra of InSe at low temperatures. The signals due to the free exciton annihilation and the nonradiative donor to valence band transition are clarified by the present technique. These results establish the usefulness of low-temperature photoacoustic spectroscopy for studying transition processes in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139109
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of Cd-doped p-InSe
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 51 (1990), S. 91-92 
    Details
    ISSN: 0022-3697
    Keywords: Cd-doped InSe ; impurity level ; layered compound ; photoluminescence
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-3697(90)90137-5
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  • 3
    Electronic Resource
    Electronic Resource
    Impurity levels in layer semiconductor p-GaSe doped with Mn (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 310-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impurity levels in Mn-doped GaSe have been investigated by using photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS) measurements. The emission band at 1.82 eV is observed on the PL spectra of the samples doped with Mn of wide range from 0.01 to 1.0 at. %. We find, from the temperature dependences of PL intensity and peak energy, that the 1.82 eV emission band is due to the transition between the conduction band and the acceptor level at 0.32 eV above the valence band. The acceptor level located at about 0.34 eV above the valence band is detected by using HE and DLTS measurements. The dominant acceptor level in the carrier transport shows almost the same position as that of the radiative recombination center. This acceptor level is probably associated with the defects formed by Mn atoms in the interlayer or interstices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357145
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  • 4
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of layer semiconductor p-GaSe doped with Zn (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4125-4129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc (Zn) is doped into GaSe single crystals grown by the Bridgman technique in a wide range from 0.005 to 0.5 at. % to the stoichiometric melt. Radiative recombination mechanisms have been investigated by using photoluminescence (PL) measurements. The PL spectra in Zn-doped samples at 77 K are dominated by three emission bands at 1.75, 1.63, and 1.27 eV. The 1.63 and 1.27 eV emission bands are enhanced with the increase in the amount of Zn. In addition to the results of Hall effect measurements, it is found that the 1.63 and 1.27 eV emission bands are associated with the acceptor levels at 0.12 and 0.3 eV above the valence band, respectively. For the 1.27 eV emission band, the temperature dependences of the PL intensity, peak energy, and half-width are characterized by the configurational coordinate model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354436
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical characteristics of layer semiconductor p-GaSe doped with Cd (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4686-4688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352765
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of p-GaSe doped with Cd (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7936-7938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity levels in Cd-doped GaSe have been studied by using photoluminescence (PL) measurements. The PL spectra at 77 K are dominated by three new emission bands at 1.95, 1.75, and 1.62 eV. The PL intensity and the peak energy of the 1.95 and 1.62 eV emission bands are measured as a function of the temperature. It is shown that the 1.95 eV emission band is due to the transition between the conduction band and the acceptor level at 0.18 eV above the valence band. The 1.62 eV emission band is caused by the transition from the donor level at 0.37 eV below the conduction band to the acceptor level at 0.13 eV above the valence band. The PL intensity increases with increasing Cd concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347488
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  • 7
    Electronic Resource
    Electronic Resource
    Zn-induced impurity levels in layer semiconductor InSe (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3647-3650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impurity levels in Zn-doped InSe have been investigated by photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS). Previous analysis by PL spectra shows that the radiative transition is dominated by donor-Zn acceptor pairs. In the present work, a search was made for the deep acceptor level using the combined data from HE and DLTS measurements. We find that the deep acceptor level, which is associated with defects or defect complexes formed by Zn atoms in the interlayer, is located about 0.6 eV above the valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344075
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1520-1524 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaSe(Cu)/InSe heterojunctions have been formed by bringing the cleavage surface of undoped n-InSe and Cu-doped p-GaSe into direct contact. Transport and phototransport properties are studied by the measurements of capacitance–voltage, current–voltage, and the spectral response of short-circuit current. Moreover, the efficiency parameters under illumination are estimated by using the open-circuit voltage and short-circuit current. These characteristics of GaSe(Cu)/InSe heterojunctions are compared with those of GaSe(Un)/InSe heterojunctions fabricated by undoped p-GaSe and n-InSe. The series resistance of GaSe(Cu)/InSe heterojunctions is found, the value of which is about 103 times lower than the corresponding value of GaSe(Un)/InSe heterojunctions. A short-circuit current density of 9.0 mA/cm2 and an open-circuit voltage of 0.42 V on GaSe(Cu)/InSe heterojunctions are obtained under illumination of 120 mW/cm2 of a halogen lamp. The short-circuit current of GaSe(Cu)/InSe heterojunctions is about one order of magnitude lager than that of GaSe(Un)/InSe heterojunctions. These experimental results indicate that the low-resistivity of Cu-doped GaSe is effective for the electrical and photovoltaic properties of GaSe/InSe heterojunctions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373849
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of layer semiconductor p-GaSe doped with Cu (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4779-4781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of Hall effect and deep-level transient spectroscopy have been made on Cu-doped p-GaSe. The moderately deep acceptor and shallow acceptor levels located at 0.13 and 0.04 eV above the valence band are obtained from the temperature dependence of the hole concentration. The hole-trapping level at 0.14 eV above the valence band is detected by deep-level transient spectroscopy and shows almost the same position as the moderately deep acceptor level. We find that the shallow acceptor level of 0.04 eV is attributed to Cu atoms, whereas the moderately deep acceptor level of 0.13 eV is governed by the defects or defect complexes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363418
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  • 10
    Electronic Resource
    Electronic Resource
    Evidence from photoluminescene spectra for the formation of extremely low-compensated P- and N-type Ge-doped GaAs grown by molecular beam epitaxy
    Amsterdam : Elsevier
    Journal of Luminescence 40-41 (1988), S. 907-908 
    Details
    ISSN: 0022-2313
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-2313(88)90493-0
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