Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 4477-4479
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A compensation of stress induced in silicon epitaxial films heavily doped with boron was investigated. Addition of a controlled amount of germanium during the film growth allows one to attain a desired compressive or tensile stress in the film, or its complete elimination. The data shows very good correlation with a theoretical model adapted from Herzog et al. [J. Electrochem. Soc. 131, 2969 (1984)]. A 6.45 : 1 ratio of atomic concentrations of Ge and B completely eliminates stress in these films. We determined a critical amount of strain in the films, (approximately-equal-to)2–4 μm thick, beyond which misfit dislocations are generated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352181
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