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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1599-1607 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the use of high-temperature sputtering in conjunction with excimer laser planarization for planarizing Al alloy surfaces and filling submicrometer, high aspect ratio (∼1–3) contact vias. In general, the process window for the complete contact filling increased significantly with the increasing sputtering temperature, and decreased with shrinking contact/via geometry. Better as-deposited metal step coverage and profile obtained at higher sputtering temperatures were identified as the key parameters contributing to this significant improvement in the process window. The process window achieved by this combined process is significantly wider than that obtained by high-temperature sputtering alone. In addition, the poor surface morphology generally observed for the Al alloy films sputtered at elevated temperatures is significantly improved due to recrystallization during laser reflow.
    Type of Medium: Electronic Resource
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