Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 3780-3784
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new concept of ion beam defect engineering is proposed. Reduction of secondary defects in 1 MeV As ion-implanted Si(100) has been investigated by Rutherford backscattering/channeling and high resolution electron microscopy. It is found that the additional irradiation of 1.6 MeV Si ions prior to two-step thermal annealing leads to a noticeable reduction of secondary defects. Good recrystallization of a buried amorphous layer is also obtained by irradiation of 1.6 MeV, 2×1015 Si/cm2 into the implanted Si sample held at elevated temperatures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350889
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