ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In modern production schemes for Si solar cells, defect passivation and impurity gettering are often used to improve material quality and thereby cell efficiency. These processes generally alter the spatial uniformity of minority-carrier transport parameters over the wafer and may result in minority-carrier lifetime and diffusion length variations both lateral and in depth. In polycrystalline Si these spatial dependences are already present due to the nature of the material. We present an extension of the photocurrent decay method to determine the diffusion length in a three-dimensionally resolved fashion. From a single photocurrent decay curve the back-surface recombination velocity, the average minority-carrier diffusion length, and an asymmetry factor which qualitatively describes the depth dependence of the diffusion length are determined. This is done using the three observables: quantum efficiency, fundamental decay time, and intercept of the extrapolated decay curve with the time-zero axis. Lateral resolution is obtained by focusing the light beam to a small spot on the cell and measuring the current decay curve as a function of position on the cell. It is shown that light-pulse durations longer than the minority-carrier lifetime and wavelengths longer than 950 nm are required. These conditions are met by using modulated wavelength-tunable light from a Ti:sapphire laser. Measurements on monocrystalline cells show that the decay time is independent of wavelength and light-pulse duration, as predicted by theory. Furthermore, the intercept with the time-zero axis was shown to increase with increasing pulse duration and wavelength. Measurements on a set of polycrystalline Si cells were performed showing that gettering treatments during cell production result in depth-dependent lifetimes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346847
Permalink
