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Investigation of deep levels in Zn-doped InSe single crystals (1992)

Micocci, G. ; Tepore, A. ; Rella, R. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 2274-2279

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Deep levels in p-InSe single crystals doped with zinc have been investigated by resistivity, Hall-effect, photoinduced-current transient spectroscopy, and space-charge-limited-current measurements. Hole traps located about 0.59 eV above the valence band have been detected and the corresponding thermal capture cross sections evaluated. These trapping levels are probably associated with defects due to dopant atoms in the interlayer regions.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.351126

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