ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Surface CoSi2 layers by moderate dose cobalt implantation for self-aligned contacts (1992)

Maszara, W. P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 1248-1252

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: CoSi2 layers produced by implantation of cobalt into silicon at 20 keV with doses 3–6×1016 cm−2 were investigated. Room temperature and 355 °C implants produced continuous layers of silicides with similar electrical properties. The minimum sheet resistivity of annealed samples was 9.2 Ω/sq. and the films were thermally stable up to about 900 °C. Low leakage currents (estimated 〈1×10−14 A(ring) per μm of a typical side-wall spacer length) in a SiO2 film which was similarly implanted with Co demonstrate the usefulness of this method for the formation of thin ((approximately-equal-to)20 nm) cobalt silicides for self-aligned source-drain contacts in shallow junction complimentary metal-oxide-semiconductor technology.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.351297

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit