ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron microscopic studies and the electrical properties of Pt contacts on n-type Si annealed by conventional furnace and rapid thermal annealing (RTA) were investigated with scanning electron microscopy, transmission electron microscopy, x-ray analysis, capacitance-voltage, and deep-level transient spectroscopy measurements. An incomplete reaction between Pt and Si is observed after furnace annealing at 550 °C due to the presence of oxygen in the ambient. An almost complete reaction between Pt and Si is achieved after silicidation by RTA at 550 °C. An acceptorlike level located 0.11 eV below the conduction-band edge with a concentration of 2×1013 cm−3 is detected only after furnace annealing at 550 °C. Silicidation by RTA at 550 °C does not introduce traps in the Si band gap.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349289