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Galvanomagnetic behavior of semiconducting FeSi2 films (1991)

Valassiades, O. ; Dimitriadis, C. A. ; Werner, J. H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 890-893

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Hall-effect measurements in magnetic fields up to 1.5 T are performed on β-FeSi2 films between 20 and 300 K. An anomalous low-field Hall coefficient R1 in addition to the normal high-field Hall coefficient R0 is detected at temperatures below 250 K. The temperature dependence of R0 is explained by a two valence-band model and an impurity level located close to the upper valence-band edge. The temperature dependence of R1 indicates that β-FeSi2 behaves as ferromagnetic below 100 K. Correlation between the coefficient Rs=R1−R0 and the electrical resistivity ρ indicates a drastic change in magnetic ordering at about 70 K.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349619

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