Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 6847-6853
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Resistivity, Hall-effect, and deep-level transient spectroscopy measurements have been performed on Cd-doped InSe single crystals grown by the Bridgman–Stockbarger method. The temperature dependence of the hole mobility can be explained by combining the optical phonon and the ionized impurity scatterings. Two hole-trapping levels have been detected at 0.42 and 0.48 eV above the valence band with a capture cross section of about 10−17 cm2. Finally, we have found the latter trap to be a deep acceptor level, which is very probably associated with defects or defect complexes formed by the dopant atoms.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349807
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