ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The thermal interdiffusion behavior of intrinsic nominally lattice-matched GaInAs/AlInAs heterostructures grown by molecular-beam epitaxy, studied using electron microscopy, is reported. At temperatures as low as 700 °C, significant degrees of interdiffusion are observed. X-ray microanalysis of the multilayers reveals that the interdiffusion takes place along a nonlinear (that is, non-lattice-matched) path. This behavior has previously been attributed to the pronounced differences in the elemental diffusivities of the constituent binary compounds. In addition, high-resolution electron microscopy (HREM) was used to determine the detailed interfacial structure of the material. Such a determination is only possible under favorable and well-defined experimental conditions. The accuracy and limitations of HREM analysis of interfacial abruptness in semiconductor interfaces are commented on.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350376
