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  • 1
    Electronic Resource
    Electronic Resource
    Electron microscope studies of interdiffusion in molecular beam epitaxy grown GaInAs/AlInAs multilayers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 182-192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal interdiffusion behavior of intrinsic nominally lattice-matched GaInAs/AlInAs heterostructures grown by molecular-beam epitaxy, studied using electron microscopy, is reported. At temperatures as low as 700 °C, significant degrees of interdiffusion are observed. X-ray microanalysis of the multilayers reveals that the interdiffusion takes place along a nonlinear (that is, non-lattice-matched) path. This behavior has previously been attributed to the pronounced differences in the elemental diffusivities of the constituent binary compounds. In addition, high-resolution electron microscopy (HREM) was used to determine the detailed interfacial structure of the material. Such a determination is only possible under favorable and well-defined experimental conditions. The accuracy and limitations of HREM analysis of interfacial abruptness in semiconductor interfaces are commented on.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350376
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy and scanning transmission electron microscope analysis of the effects of thermal processing on the structural integrity of GaInAs/GaInAsP multilayers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4297-4304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characterization by electron microscopy of a metalorganic chemical vapor deposition grown GaInAs/GaInAsP multiple-quantum-well structure undergoing a "blue shift'' in luminescence wavelength upon thermal processing, as part of a multistage epitaxial growth process, is reported. The sample exhibits a shift toward shorter wavelengths of greater than 100 nm upon annealing at 750 °C. The structural modifications that result in the blue shift include an elimination of atomic ordering in the quaternary barrier layers of the material, and significant layer interdiffusion. A method is described whereby quantitative analyses of the layer composition and lattice parameter with a spatial resolution better than 2 nm can be obtained from semiconductor multilayers using energy-dispersive x-ray microanalysis in the scanning transmission electron microscope. Such an analysis shows that the interdiffusion occurs along a nonlinear (that is, nonlattice matched) path where the group-V element diffusivities exceed those of the group-III elements, and results in the incorporation of excess coherency strains of up to 0.5% in the quantum-well regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352812
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1241-1243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of strained GaSb/GaAs quantum wells has been attempted for the first time (7% lattice mismatch), with the antimonide layers being constrained to take on the GaAs lattice parameter in the interface plane. The critical thickness for pseudomorphic growth of the strained layer was about 15 A(ring), with further growth resulting in islands of GaSb crystallites over the wafer surface. Photoluminescence spectra and photoconductivity from both single and double wells showed a strong signal at approximately 1.3 eV, identified as a Γ point transition. This was not consistent with band structure calculations for a GaSb/GaAs well, suggesting an error in the estimation of the band offsets and/or As incorporation in the strained layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100728
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  • 4
    Electronic Resource
    Electronic Resource
    GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 922-924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X-ray diffraction on an 80 A(ring) single well confirmed the Ga1−xInxSb composition to be x=0.15, for which the lattice mismatch is ≈1.0%. Photoluminescence and photoconductivity from this sample both showed a signal due to carriers in the well, the position of which was in good agreement with the calculated band diagram. Shubnikov–de Haas oscillations in the transverse magnetoresistance (ρxx) of a four-period multiquantum well, and the associated quantum Hall effect, indicated that a two-dimensional hole gas was present in one of the wells. Unusually, the strongest oscillations were seen for occupancy of an odd number of (spin split) Landau levels (ν=1,3,5,...,etc.) This sample also showed luminescence peaks at 738 and 755 meV which were attributed to recombination in the wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100809
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    Paper (German National Licenses)
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