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  • 1
    Electronic Resource
    Electronic Resource
    GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 922-924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X-ray diffraction on an 80 A(ring) single well confirmed the Ga1−xInxSb composition to be x=0.15, for which the lattice mismatch is ≈1.0%. Photoluminescence and photoconductivity from this sample both showed a signal due to carriers in the well, the position of which was in good agreement with the calculated band diagram. Shubnikov–de Haas oscillations in the transverse magnetoresistance (ρxx) of a four-period multiquantum well, and the associated quantum Hall effect, indicated that a two-dimensional hole gas was present in one of the wells. Unusually, the strongest oscillations were seen for occupancy of an odd number of (spin split) Landau levels (ν=1,3,5,...,etc.) This sample also showed luminescence peaks at 738 and 755 meV which were attributed to recombination in the wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100809
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1241-1243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of strained GaSb/GaAs quantum wells has been attempted for the first time (7% lattice mismatch), with the antimonide layers being constrained to take on the GaAs lattice parameter in the interface plane. The critical thickness for pseudomorphic growth of the strained layer was about 15 A(ring), with further growth resulting in islands of GaSb crystallites over the wafer surface. Photoluminescence spectra and photoconductivity from both single and double wells showed a strong signal at approximately 1.3 eV, identified as a Γ point transition. This was not consistent with band structure calculations for a GaSb/GaAs well, suggesting an error in the estimation of the band offsets and/or As incorporation in the strained layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100728
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetotransport of piezoelectric [111] oriented strained quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 659-661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of magnetotransport in piezoelectrically active heterostructures. Well-resolved quantum Hall plateaus and magnetoresistance minima are observed for two-dimensional hole gases confined in [111] oriented strained-layer Ga1−xInxSb/GaSb quantum wells with a piezoelectric field, of order 1×105 V/cm. We discuss the enhanced carrier densities induced by the in-built field and the differences observed between [111]A and [111]B orientations. Comparisons are made with simultaneously grown [001] structures. Stark energy shifts observed in photoluminescence are well accounted for by the estimated electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105356
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    Paper (German National Licenses)
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