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  • 1
    Electronic Resource
    Electronic Resource
    Ionization energy studies for ozone and OClO monomers and dimers (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 984-992 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron impact ionization cross sections measured close to threshold are reported for both the monomers and dimers of ozone and OClO using a new high resolution electron impact apparatus. The present appearance energies AE(O3+/O3)=12.70±0.02 eV, AE (OClO+/OClO)=10.55±0.02 and AE(ClO+/OClO=13.37±0.03 eV derived from the measured ionization cross sections are in excellent agreement with the vertical threshold values determined for these ions by high resolution PES and PIMS photoionization studies. The corresponding appearance energies determined for the dimer ions, 10.10±0.3 eV for (O3)2+ and 9.87±0.2 eV for (OClO)2+, are both red shifted with respect to the monomer case. The bond energy (0.70–0.3+0.5) eV of (OClO)2+ estimated from these data is similar to that of other dimer ions, whereas the bond energy of (O3–O3+) with (2.55−0.4+0.6) eV is rather large suggesting an unusual structure for the cationic ozone dimer ion. Based on quantum chemical calculations on various levels we are led to the conclusion that the ion produced by ionization of the ozone dimer is no longer a conventional dimer ion where the two monomer units are still present (as is the case for the OClO system), but rather an ion of form O2(centered ellipsis)O4+ or a twisted ring structure of (O6)+. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1386669
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  • 2
    Electronic Resource
    Electronic Resource
    GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1241-1243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of strained GaSb/GaAs quantum wells has been attempted for the first time (7% lattice mismatch), with the antimonide layers being constrained to take on the GaAs lattice parameter in the interface plane. The critical thickness for pseudomorphic growth of the strained layer was about 15 A(ring), with further growth resulting in islands of GaSb crystallites over the wafer surface. Photoluminescence spectra and photoconductivity from both single and double wells showed a strong signal at approximately 1.3 eV, identified as a Γ point transition. This was not consistent with band structure calculations for a GaSb/GaAs well, suggesting an error in the estimation of the band offsets and/or As incorporation in the strained layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100728
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  • 3
    Electronic Resource
    Electronic Resource
    Translational spectroscopy of metastable fragments produced by dissociative excitation of carbon disulphide (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 1750-1751 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The production of the S(5s) metastable state by electron impact dissociative excitation of carbon disulphide is reported. Kinetic energy distributions of the sulphur fragments determined by the method of time-of-flight spectroscopy are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464291
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  • 4
    Electronic Resource
    Electronic Resource
    Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2041-2043 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of self-assembled quantum dots (QDs) of InSb embedded in a GaSb matrix grown by metalorganic vapor phase deposition. Growth temperatures and deposition times have been optimized for maximal photoluminescence peak intensities. Photoluminescence (PL), magneto-PL, and atomic force microscopy (AFM) have been performed to estimate the size of the QDs. The quantum dots luminesce in the midinfrared at around 0.73 eV. The application of magnetic fields up to 15 T both parallel and perpendicular to the growth direction enhanced the wetting layer and bulk PL intensity and enabled an estimate to be made of the QD height and widths as 2–4 and 20–30 nm, respectively. These sizes were confirmed by AFM. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123750
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  • 5
    Electronic Resource
    Electronic Resource
    GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 922-924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X-ray diffraction on an 80 A(ring) single well confirmed the Ga1−xInxSb composition to be x=0.15, for which the lattice mismatch is ≈1.0%. Photoluminescence and photoconductivity from this sample both showed a signal due to carriers in the well, the position of which was in good agreement with the calculated band diagram. Shubnikov–de Haas oscillations in the transverse magnetoresistance (ρxx) of a four-period multiquantum well, and the associated quantum Hall effect, indicated that a two-dimensional hole gas was present in one of the wells. Unusually, the strongest oscillations were seen for occupancy of an odd number of (spin split) Landau levels (ν=1,3,5,...,etc.) This sample also showed luminescence peaks at 738 and 755 meV which were attributed to recombination in the wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100809
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  • 6
    Electronic Resource
    Electronic Resource
    Metastable and nonmetastable deep states of Ge in GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3209-3211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show from transport investigations that Ge doped GaAs can be either semimetallic or semiconducting depending on hydrostatic pressure and previous sample illumination. This property results from a unique crossover of two states of the Ge donor in GaAs in their energetic position under pressure. The experimental results obtained make it possible to identify the nature of these Ge-donor states: The drastic enhancement of the electron mobility after illumination is taken as evidence of the electron transfer from the two-electron DX− state to a neutral, localized, and unrelaxed state of the Ge donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110787
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetotransport of piezoelectric [111] oriented strained quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 659-661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of magnetotransport in piezoelectrically active heterostructures. Well-resolved quantum Hall plateaus and magnetoresistance minima are observed for two-dimensional hole gases confined in [111] oriented strained-layer Ga1−xInxSb/GaSb quantum wells with a piezoelectric field, of order 1×105 V/cm. We discuss the enhanced carrier densities induced by the in-built field and the differences observed between [111]A and [111]B orientations. Comparisons are made with simultaneously grown [001] structures. Stark energy shifts observed in photoluminescence are well accounted for by the estimated electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105356
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