Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 6472-6477
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CdTe layers were grown on oriented CdTe(111)B substrates by hot-wall epitaxy. The crystallinity of the layers was examined by etch-pit observation, x-ray rocking curves, and photoluminescence spectra. High-quality CdTe(111)B homoepitaxial layers without twinned domains are obtained. It is found that the CdTe(111)B homoepitaxial layers are strained. The crystallinity and amount of strain of the layers depend on the preheating temperature of substrates before the growth. For comparison, CdTe(100) homoepitaxial layers were grown and characterized.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348853
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