Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 320-323
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The density N(E) of midgap states in vacuum-evaporated and thermally annealed amorphous GaS films has been deduced from space-charge-limited-current (SCLC) measurements. Specimens with an In/a-GaS/stainless-steel sandwich structure have been used to obtain current-voltage characteristics at room temperature. By using an analytical method the density N(E) over an energy range extending about 0.18 eV above the Fermi level at thermal equilibrium has been calculated. The conductivity data for variable-range hopping [log(σ)∝T−1/4] have also been studied, but the calculated values of N(E) are approximately one order of magnitude higher than those obtained by SCLC measurements.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347715
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