Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 4592-4597
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CdTe (111)B layers were grown on oriented and misoriented GaAs (100) substrates by hot-wall epitaxy. The crystallinity of the layers was examined by x-ray diffraction. The strain relaxation was investigated by x-ray diffraction and optical reflectance spectra. (1) For the layers on oriented substrates, it is found that the strain of the layer is relaxed as the layer thickness increases, but additional strain, which is probably due to the formation of twinned domains, remains and is hardly relaxed. (2) Layers on misoriented substrates are twin free with good crystalline quality. Strain is relaxed as the layer thickness increases. The residual strain of layers thicker than 10 μm is for the most part due to the difference of thermal expansion coefficients between CdTe and GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346167
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