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Trap-induced photoconductivity in semi-insulating GaAs (1990)

Desnica, U. V. ; Šantic, B.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 1408-1411

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Photoconductivity of semi-insulating gallium arsenide illuminated with monochromatic photons in the 0.7–1.8 eV range has been studied. It has been found that photoconductivity strongly depends on the occupancy of deep traps present in the material, so that the photoconductivity measured for the full trap regime is several orders of magnitude larger than one taken when the traps are empty. By selective emptying or filling of traps it was possible to identify the contribution of each particular trap to the photoconductivity enhancement in different temperature intervals.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345697

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