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Nucleation and growth of current filaments in semiconductors (1990)

Mayer, K. M. ; Huebener, R. P. ; Rau, U.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 1412-1416

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The nucleation and disappearance of current filaments in homogeneously slightly doped semiconductors during avalanche breakdown at low temperatures is quantitatively evaluated in terms of a minimum and maximum value of the filament current. Both values arise from a model based on the power balance in the system. Experimental results obtained by the two-dimensional imaging of the filament configurations in n-GaAs and p-Ge agree quantitatively with the predictions of our power balance model.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345698

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